반응 #577204

ord-20816e1ca3a541569af71e18a76e335f

반응 방정식

CCC1(COS(=O)(=O)c2ccc(C)cc2)COC1
3-((tosyloxy)methyl)-3-ethyloxetane
CCOC(=O)c1ccccc1O
ethyl hydroxybenzoate
[K+].[OH-]
potassium hydroxide
CN(C)C=O
dimethylformamide
CCC1(COc2ccc(C(=O)O)cc2)COC1
4-(3-ethyloxetane-3-ylmethoxy)benzoic acid
수율 84.4%

반응 조건

온도
70°CELSIUS
상세 조건
See reaction.notes.procedure_details.

후처리

  1. 1
    기타to 45° C.
  2. 2
    workup.STIRRINGstirred at 45° C. for 3 hours
  3. 3
    기타the toluene layer was separated
  4. 4
    세척The toluene layer was washed with 3% hydrochloric acid
  5. 5
    workup.DISTILLATIONa saturated sodium carbonate solution and water, and then toluene was distilled off
  6. 6
    workup.ADDITION50 g of sodium hydroxide, 500 mL of ethanol and 200 mL of water were added to the resulting residue
  7. 7
    온도refluxed for 2 hours
  8. 8
    기타A residue obtained
  9. 9
    workup.DISTILLATIONby distilling ethanol
  10. 10
    기타to obtain crystals
  11. 11
    기타The crystals thus obtained
  12. 12
    여과by filtering
  13. 13
    기타were recrystallized from a mixed solvent of ethanol and water

실험 절차

50 g of ethyl hydroxybenzoate and 21 g of potassium hydroxide were added to 400 mL of dimethylformamide, and stirred at 70° C. for 1 hour. After decreasing the temperature to 45° C., 100 g of 3-((tosyloxy)methyl)-3-ethyloxetane was added dropwise thereto, and then stirred at 45° C. for 3 hours. Water and toluene were added thereto, and the toluene layer was separated. The toluene layer was washed with 3% hydrochloric acid, a saturated sodium carbonate solution and water, and then toluene was distilled off. 50 g of sodium hydroxide, 500 mL of ethanol and 200 mL of water were added to the resulting residue, and refluxed for 2 hours. A residue obtained by distilling ethanol off was put in 500 mL of 5% hydrochloric acid to obtain crystals. The crystals thus obtained by filtering were recrystallized from a mixed solvent of ethanol and water to obtain 60 g of 4-(3-ethyloxetane-3-ylmethoxy)benzoic acid (OX1), which had a melting point of 127.5° C.

출처

DOI: 10.6084/m9.figshare.5104873.v1특허: US07527837B2uspto-grants-2009_05